impurity defect
英 [ɪmˈpjʊərəti ˈdiːfekt]
美 [ɪmˈpjʊrəti ˈdiːfekt]
杂质缺陷
双语例句
- Impurity Band in One-dimensional Photonic Crystal Containing Defect Layers with Negative Refractive Index
含负折射率缺陷的一维光子晶体的杂质带 - Some defects such as delamination, impurity and crack found during the ultrasonic automatic detection were also analyzed through metallographic analysis with high and low magnification, it have been verified that the size detected by both methods for same defect also identical.
对超声波自动检测过程中发现的分层、夹杂和裂纹等缺陷部位进行现场取样并进行高、低倍金相组织分析，其结果与超声波自动检测完全吻合。 - In the mean time, the new theoretical level and technological conditions give rise to fresh development in Si modification, impurity luminescence, defect engineering and Si-based heteroepitaxy.
与此同时，在新的理论认识与技术条件下，硅材料改性，杂质发光，缺陷工程和硅基异质外延也呈现出新的发展趋势。 - The Crystal Shape, Impurity, Defect and Color of Synthetic Diamond and the Influence on the Parameters Characterizing Diamond Quality
人工合成金刚石的晶体形态、杂质缺陷、颜色及其对金刚石性能表征参数的影响 - Thus, some experimental data were not explained reasonably. In addition, since the EPR parameters are sensitive to the defect structures of 3d~ 1 impurity centers, the information on the defect structures of 3d~ 1 impurity centers has not been obtained yet.
这样，使一些实验数据没有得到合理的解释，由于EPR参量对3d~1杂质中的缺陷结构非常敏感，也没有能够从对EPR参量的合理理论分析中获得3d~1杂质的缺陷结构的信息。 - The effects of impurity on electrochemical oxidation, collecting and depression of galena were studied by cyclic voltammetry. The electrochemical model for the effect of lattice defect on flotation of galena has been established.
采用循环伏安法测试了杂质对方铅矿氧化、捕收和抑制电化学行为的影响，建立了晶格缺陷对方铅矿浮选影响的电化学模型。 - Only nearly ultraviolet photoluminescence peaks were observed, which came from the excitonic luminescence of ZnO QDs, proving that surface defect and impurity defect were less in ZnO QDs.
PL只有近紫外发光峰，为ZnO量子点的激子态发光，证明ZnO量子点表面缺陷和杂质缺陷较少。 - Photoluminescence ( PL) is one of the most effective methods to study the behavior of impurity and defect in ZnO. High quality single-crystal ZnO is the basis of carrying out the high resolution PL study.
光致发光（PL）是研究ZnO杂质和缺陷行为最行之有效的有段之一获得良好的单晶ZnO是开展高分辨率PL研究的基础。 - Since pure radioactive ion beam can be implanted into material directly, research on solid physics especially on impurity and defect in semiconductor become possible.
由于可以将纯净放射性核束注入到样品中去，使得其在固态物理特别是涉及到半导体中的杂质和缺陷问题的应用成为可能。